summary v (br)dss = -60v; r ds(on) = 0.055 ;i d = -4.8a description this new generation of trench mosfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? low profile soic package applications ? motor drive ? disconnect switches device marking zxmp 6a18 ZXMP6A18DN8 provisional issue c - march 2005 advance information 1 dual p-channel 60v enhancement mode mosfet device reel tape width quantity per reel ZXMP6A18DN8ta 7 ?? 12mm 500 units ZXMP6A18DN8tc 13?? 12mm 2500 units ordering information so8 top view pinout
ZXMP6A18DN8 provisional issue c - march 2005 2 advance information parameter symbol v alue unit junction to ambient (a)(d) r ja 100 c/w junction to ambient (b)(e) r ja 70 c/w junction to ambient (b)(d) r ja 60 c/w thermal resistance notes (a) for a dual device surface mounted on 25mm x 25mm fr4 pcb with coverage of single sided 1oz copper in still air conditions. (b) for a dual device surface mounted on fr4 pcb measured at t 10 sec. (c) repetitive rating 25mm x 25mm fr4 pcb, d=0.02 pulse width=300s - pulse width limited by maximum junction temperature. (d) for a dual device with one active die. (e) for dual device with 2 active die running at equal power. parameter symbol limit unit drain-source voltage v dss -60 v gate-source voltage v gs 20 v continuous drain current@v gs =10v; t a =25 c (b)(d) @v gs =10v; t a =70 c (b)(d) @v gs =10v; t a =25 c (a)(d) i d -4.8 -3.8 -3.7 a a a pulsed drain current (c) i dm -23.8 a continuous source current (body diode) (b) i s -3.3 a pulsed source current (body diode) (c) i sm -23.8 a power dissipation at ta=25c (a)(d) linear derating factor p d 1.25 10 w mw/c power dissipation at ta=25c (a)(e) linear derating factor p d 1.8 14 w mw/c power dissipation at ta=25c (b)(d) linear derating factor p d 2.1 17 w mw/c operating and storage temperature range t j :t stg -55 to +150 c absolute maximum ratings
advance information characteristics ZXMP6A18DN8 provisional issue c - march 2005 3
ZXMP6A18DN8 provisional issue c - march 2005 4 advance information parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss -60 v i d =-250 a, v gs =0v zero gate voltage drain current i dss -1.0 av ds =-60v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) -1.0 v i d =-250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.055 0.080 v gs =-10v, i d =-3.5a v gs =-4.5v, i d =-2.9a forward transconductance (1)(3) g fs 8.7 s v ds =-15v,i d =-3.5a dynamic (3) input capacitance c iss 1580 pf v ds =-30 v, v gs =0v, f=1mhz output capacitance c oss 160 pf reverse transfer capacitance c rss 140 pf switching (2) (3) turn-on delay time t d(on) 4.6 ns v dd =-30v, i d =-1a r g ? 6.0 ,v gs =-10v rise time t r 5.8 ns turn-off delay time t d(off) 55 ns fall time t f 23 ns gate charge q g 23 nc v ds =-30v,v gs =-5v, i d =-3.5a total gate charge q g 44 nc v ds =-30v,v gs =-10v, i d =-3.5a gate-source charge q gs 3.9 nc gate-drain charge q gd 9.8 nc source-drain diode diode forward voltage (1) v sd -0.85 -0.95 v t j =25c, i s =-4.2a, v gs =0v reverse recovery time (3) t rr 37 ns t j =25c, i f =-2.1a, di/dt= 100a/ s reverse recovery charge (3) q rr 56 nc electrical characteristics (at t amb = 25c unless otherwise stated) notes (1) measured under pulsed conditions. width 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
ZXMP6A18DN8 provisional issue c - march 2005 5 advance information typical characteristics
advance information typical characteristics ZXMP6A18DN8 provisional issue c - march 2005 6
ZXMP6A18DN8 provisional issue c - march 2005 7 europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex semiconductors plc 2004 advance information package outline controlling dimensions are in inches approx in millimeters dim millimeters inches dim millimeters inches min max min max min max min max a 1.35 1.75 0.053 0.069 e 1.27 bsc 0.050 bsc a1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 d 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010 h 5.80 6.20 0.228 0.244 0 8 0 8 e 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020 package dimensions
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